Yang Sui

High Voltage P-channel Dmos-igbts in Sic: Design, Simulation, Fabrication, and Characterization Yang Sui

SiC has been an excellent material for powerswitching devices because of its wide bandgap andhigh breakdown field. SiC power MOSFETs below 10 kVhave been successfully developed and fabricated inthe past decade. However, MOSFETs blocking above 10kV face the problem of high on-state resistance. This problem cannot be solved within MOSFET itself. P-channel IGBTs, a new type of SiC power transistorsthat provide a solution for 20 kV applications, arestudied in this book. Extensive numerical simulationis carried out to demonstrate the device performanceand to optimize the device design. The first highperformance 20 kV P-IGBT is successfully fabricated. These P-IGBTs exhibit significant conductivitymodulation in the drift layer, which greatly reducesthe on-state voltage drop. Assuming a 300 Watt persquare centimeter power package limit, the maximumcurrents of the experimental P-IGBTs are 1.24x and 2xhigher than the theoretical maximum current of a 20kV MOSFET at room temperature and 177°C, respectively.