この商品を友人に教える:
An Soi Ldmos for Better Switch Application: Electron Devices Anup Kumar Bhattacharjee
価格
¥ 6.278
税抜
遠隔倉庫からの取り寄せ
発送予定日 年8月3日 - 年8月13日
Anup Kumar Bhattacharjee の新しいリリースのお知らせを受け取る
iMusicのウィッシュリストに追加
An Soi Ldmos for Better Switch Application: Electron Devices
Anup Kumar Bhattacharjee
This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-?m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-?m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.