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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change Hai Li 第1 版
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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change
Hai Li
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
203 pages, 39; 10 Tables, black and white; 175 Illustrations, black and white
| メディア | 書籍 Paperback Book (ソフトカバーで背表紙を接着した本) |
| リリース済み | 2017年3月29日 |
| ISBN13 | 9781138076631 |
| 出版社 | Taylor & Francis Ltd |
| ページ数 | 204 |
| 寸法 | 150 × 220 × 10 mm · 453 g |
| 言語 | 英語 |
