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Metallic Spintronic Devices - Devices, Circuits, and Systems 第1 版
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Metallic Spintronic Devices - Devices, Circuits, and Systems
Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:
- Describes spintronic applications in current and future magnetic recording devices
- Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
- Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
- Investigates spintronic device write and read optimization in light of spintronic memristive effects
- Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
- Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic
Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
274 pages, 7 Tables, black and white; 152 Illustrations, black and white
| メディア | 書籍 Paperback Book (ソフトカバーで背表紙を接着した本) |
| リリース済み | 2017年3月29日 |
| ISBN13 | 9781138072329 |
| 出版社 | Taylor & Francis Ltd |
| ページ数 | 274 |
| 寸法 | 150 × 220 × 10 mm · 510 g |
| 言語 | 英語 |
| 編集者 | Wang, Xiaobin (Avalanche Technology, Fremont, California, USA) |
